期刊
APPLIED PHYSICS LETTERS
卷 97, 期 4, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3473725
关键词
Brillouin zones; Fermi level; ferromagnetism; graphene; internal stresses; monolayers; nanoelectronics; nanomechanics
资金
- A*STAR (Agency for Science, Technology and Research) of Singapore [092 101 0060 (R-398-000-061-305)]
- National University of Singapore Nanoscience and Nanotechnology Initiative
We propose a simple, yet highly efficient and robust device for producing valley polarized current in graphene. The device comprises of two distinct components; a region of uniform uniaxial strain, adjacent to an out-of-plane magnetic barrier configuration formed by patterned ferromagnetic stripes. We show that when the amount of strain, magnetic field strength, and Fermi level are properly tuned, the output current can be made to consist of only a single valley contribution. Perfect valley filtering is achievable within experimentally accessible parameters. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3473725]
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