期刊
APPLIED PHYSICS LETTERS
卷 96, 期 10, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3357436
关键词
-
资金
- Ministry of Education, Culture, Sports, Science, and Technology (MEXT) [18686050]
- Kato Science Foundation
- Nippon Sheet Glass Foundation for Materials Science and Engineering
- Iketani Science and Technology Foundation
- Grants-in-Aid for Scientific Research [18686050] Funding Source: KAKEN
We demonstrate efficient spin injection into GaAs across an Fe3O4 electrode. Spin polarization of electrons injected into a GaAs quantum well becomes significantly large below 120 K, reaching a value of 33% at 10 K. The large spin polarization is likely due to spin filtering effect across the insulating ferrimagnetic Fe3O4 layer at the interface. The results indicate that spin filtering effect across Fe3O4 is a very promising means to enhance the spin injection efficiency into semiconductors. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3357436]
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据