相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Ge/GeO2 Interface Control with High-Pressure Oxidation for Improving Electrical Characteristics
Choong Hyun Lee et al.
APPLIED PHYSICS EXPRESS (2009)
Origin of electric dipoles formed at high-k/SiO2 interface
Koji Kita et al.
APPLIED PHYSICS LETTERS (2009)
Surface Defects and Passivation of Ge and III-V Interfaces
Michel Houssa et al.
MRS BULLETIN (2009)
Ultimate Scaling of CMOS Logic Devices with Ge and III-V Materials
M. Heyns et al.
MRS BULLETIN (2009)
Atomistic model structure of the Ge(100)-GeO2 interface
Peter Broqvist et al.
MICROELECTRONIC ENGINEERING (2009)
Post metallization annealing study in La2O3/Ge MOS structure
J. Song et al.
MICROELECTRONIC ENGINEERING (2009)
Opportunities and challenges for Ge CMOS - Control of interfacing field on Ge is a key
Akira Toriumi et al.
MICROELECTRONIC ENGINEERING (2009)
First-principles study of the structural and electronic properties of (100)Ge/Ge(M)O2 interfaces (M=Al, La, or Hf)
M. Houssa et al.
APPLIED PHYSICS LETTERS (2008)
Electrical properties of La2O3 and HfO2/La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices
G. Mavrou et al.
JOURNAL OF APPLIED PHYSICS (2008)
Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide
Annelies Delabie et al.
APPLIED PHYSICS LETTERS (2007)
HfO2 as gate dielectric on Ge:: Interfaces and deposition techniques
M. Caymax et al.
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY (2006)
Distinctly different thermal decomposition pathways of ultrathin oxide layer on Ge and Si surfaces
K Prabhakaran et al.
APPLIED PHYSICS LETTERS (2000)