期刊
APPLIED PHYSICS LETTERS
卷 96, 期 26, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3460141
关键词
epitaxial layers; ferroelectric storage; ferroelectric switching; ferroelectric thin films; lanthanum compounds; lead compounds; platinum; random-access storage; Schottky barriers; strontium compounds
资金
- Korea Government MEST [R0A-2008-000-20052-0]
- MEST [R31-2008-000-100570]
- Ministry of Education [NRF-2008-314-C00111]
- Korea MEST (Quantum Metamaterials Research Center) [R11-2008-053-03002-0]
- National Research Foundation of Korea [2008-0062164, 2008-0060004, 314-2008-1-C00111] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We found different nonvolatile memory effects between ferroelectric and resistive switching in Pt/PbZr0.3Ti0.7O3(PZT)/La0.5Sr0.5CoO3 (LSCO) heterostructures, depending on thickness of epitaxial PZT films. As the film thickness decreased below 34 nm, leakage and/or tunneling currents increased and hindered ferroelectric switching of films; alternatively, bipolar resistive switching was observed. Analysis using fitting plot on resistive switching behaviors suggested that variable Schottky barrier at the interface between Pt electrode and the film may be responsible for the different nonvolatile memory switching. (C) 2010 American Institute of Physics. [doi:10.1063/1.3460141]
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