Electron cyclotron effective mass in indium nitride

We report on cyclotron effective mass measurement in indium nitride epilayers grown on c-sapphire, using the thermal damping of Shubnikov-de-Haas oscillations obtained in the temperature range 2-70 K and under magnetic field up to 60 T. We unravel an isotropic electron cyclotron effective mass equal to 0.062 +/- 0.002m(0) for samples having electron concentration near 10(18) cm(-3). After nonparabolicity and polaron corrections we estimate a bare mass at the bottom of the band equal to 0.055 +/- 0.002m(0).