相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Free electron behavior in InN: On the role of dislocations and surface electron accumulation
V. Darakchieva et al.
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Ammonia: A source of hydrogen dopant for InN layers grown by metal organic vapor phase epitaxy
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The role of threading dislocations and unintentionally incorporated impurities on the bulk electron conductivity of In-face InN
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High-resolution hydrogen profiling in AlGaN/GaN heterostructures grown by different epitaxial methods
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Role of impurities and dislocations for the unintentional n-type conductivity in InN
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Lattice parameters, deviations from Vegard's rule, and E2 phonons in InAlN
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Sources of unintentional conductivity in InN
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The nature of nitrogen related point defects in common forms of InN
K. S. A. Butcher et al.
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Anisotropic strain and phonon deformation potentials in GaN
V. Darakchieva et al.
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Huge positive magnetoresistance in an InN film
C.-T. Liang et al.
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Model for the thickness dependence of electron concentration in InN films
V. Cimalla et al.
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In-polar InN grown by plasma-assisted molecular beam epitaxy
Chad S. Gallinat et al.
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Origin of the n-type conductivity of InN:: The role of positively charged dislocations
L. F. J. Piper et al.
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Surface charge accumulation of InN films grown by molecular-beam epitaxy
H Lu et al.
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MBE-growth, characterization and properties of InN and InGaN
Y Nanishi et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2003)
Donor and acceptor concentrations in degenerate InN
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Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy
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