期刊
APPLIED PHYSICS LETTERS
卷 96, 期 19, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3427406
关键词
epitaxial growth; epitaxial layers; graphene; graphitisation; Raman spectra; scanning tunnelling microscopy; silicon; silicon compounds; X-ray photoelectron spectra
Epitaxial graphene films grown on silicon carbide (SiC) substrate by solid state graphitization is of great interest for electronic and optoelectronic applications. In this paper, we explore the properties of epitaxial graphene films on 3C-SiC(111)/Si(111) substrate. X-ray photoelectron spectroscopy and scanning tunneling microscopy were extensively used to characterize the quality of the few-layer graphene (FLG) surface. The Raman spectroscopy studies were useful in confirming the graphitic composition and measuring the thickness of the FLG samples. (C) 2010 American Institute of Physics. [doi:10.1063/1.3427406]
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