期刊
APPLIED PHYSICS LETTERS
卷 97, 期 23, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3524217
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资金
- Singapore National Research Foundation under NRF RF [NRFRF2010-07]
- MOE Tier 2 [MOE2009-T2-1-037]
The evolution of electronic structures of hydrogenated graphene with different amount of hydrogen (H) coverage was investigated by ultraviolet photoemission spectroscopy and optical absorption spectroscopy. Raman spectroscopy and x-ray photoelectron spectroscopy were used to monitor and evaluate the H coverage. At low H coverage, the sp(3) C-H bonds embedded within a sp(2) C matrix behave as defects in graphene and depress the delocalized pi electron system. At high H coverage, two localized pi electron states originating from the sp(2) C clusters encircled by the sp(3) C-H matrix appear in the electronic band structures, and an opening of a band gap has been observed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3524217]
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