期刊
APPLIED PHYSICS LETTERS
卷 96, 期 11, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3364139
关键词
CMOS integrated circuits; electronic density of states; field effect transistors; graphene; nanofabrication; nanostructured materials
资金
- European Union [215752]
- German Federal Ministry of Education and Research (BMBF) [NKNF 03X5508]
We investigate the transport properties of double-gated bilayer graphene nanoribbons at room temperature. The devices were fabricated using complementary metal-oxide semiconductor (CMOS)-compatible processes. By analyzing the dependence of the resistance at the charge neutrality point as a function of the electric field applied perpendicular to the graphene surface, we show that a band gap in the density of states opens, reaching an effective value of similar to 50 meV. This demonstrates the potential of bilayer graphene as channel material for a field-effect transistor in a conventional CMOS environment.
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