Effects of fluorine incorporation into HfO2 gate dielectrics on InP and In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors

In this work, the effects of fluorine (F) incorporation on electrical characteristics of HfO2/InP and HfO2/In0.53Ga0.47As gate stack are presented. F had been introduced into HfO2 gate dielectric by postgate CF4 plasma treatment, which was confirmed by x-ray photoelectron spectroscopy analysis and a secondary ion mass spectrometry technique. Compared to the control sample, fluorinated samples had great improvements in subthreshold swing, hysteresis, the normalized extrinsic transconductance, and the normalized drain current. These improvements can be attributed to the reduction in fixed charge in the HfO2 bulk and less interface trap density at the HfO2/III-V interface. (C) 2010 American Institute of Physics. [doi:10.1063/1.3457388]