期刊
APPLIED PHYSICS LETTERS
卷 97, 期 8, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3483763
关键词
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资金
- NRF [2009-8-0403]
- Brain Korea 21 Program
- National Research Foundation of Korea [2009-0079462, 과06A1507] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We report on photo-excited trap-charge-collection spectroscopy, contrived to measure the density of deep-level traps near channel/dielectric interface in a working ZnO based thin-film transistor as a function of photon probe energy. Free charges trapped at a certain energy level are liberated by the correspondingly energetic photons and then electrically collected at the source/drain electrodes. During this photo-electric process, the threshold voltage of TFT shifts and its magnitude provides the density-of-state information of charge traps. In the present work, we directly characterized the density-of-state of ZnO based thin-film transistors with polymer-oxide double dielectrics after evaluating their gate stabilities. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3483763]
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