期刊
SOLID STATE COMMUNICATIONS
卷 132, 期 8, 页码 503-506出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2004.09.024
关键词
silicon-based PCs; deep reactive ion etching; photonic band gap; transmission and reflection spectra
We report the fabrication and characterization of two-dimensional silicon-based photonic crystal structures realized by deep reactive ion etching. Photonic crystals with square and triangular lattices with very high aspect ratios up to 33 have been achieved. Photonic bandgap behaviors are identified by the transmission and reflection spectra measured by using a Fourier transform infrared spectrometer. The experimental results are in good agreement with the calculated band structures. (C) 2004 Elsevier Ltd. All rights reserved.
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