Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress

In this letter, we investigate the impact of the light illumination on the stability of indium-gallium-zinc oxide thin film transistors under positive gate-bias stress. The noticeable decrease in threshold voltage (V(t)) shift more than 5.5 V under illuminated positive gate-bias stress indicates a superior reliability in contrast with the dark stress. The accelerated V(t) recovery characteristic compared with dark recovery demonstrates that the charge detrapping effect was enhanced under illumination. Furthermore, the average effective energy barrier of charge trapping and detrapping was derived to verify that illumination can excite the trapped charges and accelerate the charge detrapping process. (c) 2010 American Institute of Physics. [doi:10.1063/1.3481676]