Nondestructive depth-resolved spectroscopic investigation of the heavily intermixed In2S3/Cu(In,Ga)Se2 interface

The chemical structure of the interface between a nominal In2S3 buffer and a Cu(In,Ga)Se-2 (CIGSe) thin-film solar cell absorber was investigated by soft x-ray photoelectron and emission spectroscopy. We find a heavily intermixed, complex interface structure, in which Cu diffuses into (and Na through) the buffer layer, while the CIGSe absorber surface/interface region is partially sulfurized. Based on our spectroscopic analysis, a comprehensive picture of the chemical interface structure is proposed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3425739]