4.6 Article

Scanning gate microscopy of current-annealed single layer graphene

期刊

APPLIED PHYSICS LETTERS
卷 96, 期 11, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.3327829

关键词

annealing; current density; electrical conductivity; electron-hole recombination; graphene; scanning probe microscopy

资金

  1. EU GRAND
  2. ERC grant NANOPOTS
  3. EPSRC [EP/G042357/1]
  4. Royal Society
  5. EPSRC [EP/G042357/1] Funding Source: UKRI
  6. Engineering and Physical Sciences Research Council [EP/G042357/1] Funding Source: researchfish

向作者/读者索取更多资源

We have used scanning gate microscopy to explore the local conductivity of a current-annealed graphene flake. A map of the local neutrality point (NP) after annealing at low current density exhibits micron-sized inhomogeneities. Broadening of the local e-h transition is also correlated with the inhomogeneity of the NP. Annealing at higher current density reduces the NP inhomogeneity, but we still observe some asymmetry in the e-h conduction. We attribute this to a hole-doped domain close to one of the metal contacts combined with underlying striations in the local NP.

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