期刊
APPLIED PHYSICS LETTERS
卷 97, 期 2, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3462298
关键词
gallium compounds; III-V semiconductors; light emitting diodes; nanolithography; nanopatterning; sapphire; semiconductor epitaxial layers; soft lithography; substrates; wide band gap semiconductors
资金
- DFG [SPP1355]
- MICINN of Spain [CT2008-00795/BQU, CAM 2010C-07-25200]
- [MADRISOLAR-2]
- [S2009/PPQ-1533]
We correlate carrier recombination via charge transfer excitons (CTEs) with the short circuit current, J(sc), in polymer/fullerene solar cells. Near infrared photoluminescence spectroscopy of CTE in three blends differing for the fullerene acceptor, gives unique insights into solar cell characteristics. The energetic position of the CTE is directly correlated with the open-circuit voltage, V(oc), and more important J(sc) decreases with increasing CTE emission intensity. CTE emission intensity is discussed from the perspective of blend morphology. The work points out the fundamental role of CTE recombination and how optical spectroscopy can be used to derive information on solar cell performances. (C) 2010 American Institute of Physics. [doi:10.1063/1.3462298]
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