期刊
APPLIED PHYSICS LETTERS
卷 96, 期 15, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3400215
关键词
Fourier transform spectra; infrared spectra; IV-VI semiconductors; lead compounds; nanowires; scanning electron microscopy; semiconductor growth; sputter deposition; X-ray diffraction; X-ray photoelectron spectra
Lead selenide (PbSe) nanowires were grown by magnetron sputtering on silicon with silicon dioxide (SiO2/Si) substrates, and characterized by scanning electron microscopy, x-ray diffraction, Fourier transform infrared spectroscopy, photoluminescence, and x-ray photoelectron spectroscopy. Closely packed PbSe nanowires of approximately 100 nm diameter grew in the << 111 >> rock-salt cubic structure orientation. These large wires showed a large blueshift in the luminescence and absorption compared to the bulk crystal, demonstrating quantum confinement. This is attributed to a strong built-in field due to surface states, band bending, and a depletion layer which confines the carrier states.
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