相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。AlGaN/GaN HEMTs With Low Leakage Current and High On/Off Current Ratio
Yu-Syuan Lin et al.
IEEE ELECTRON DEVICE LETTERS (2010)
Current transport in Pt Schottky contacts to a-plane n-type GaN
Soo-Hyon Phark et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2010)
Investigation of the electronic properties of nitrogen vacancies in AlGaN
X. A. Cao et al.
JOURNAL OF APPLIED PHYSICS (2009)
Analysis of the current-voltage characteristics of the Pd/Au Schottky structure on n-type GaN in a wide temperature range
M. Ravinandan et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2009)
Improvement in GaN and AlGaN/GaN Schottky diode performance by reduction in epitaxial film dislocation density
D. J. Ewing et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2008)
Low-resistance Ni-based Schottky diodes on freestanding n-GaN
L. Lewis et al.
APPLIED PHYSICS LETTERS (2007)
Temperature-dependent electrical characteristics of bulk GaN Schottky rectifier
Yi Zhou et al.
JOURNAL OF APPLIED PHYSICS (2007)
On the temperature and carrier density dependence of electron saturation velocity in an AlGaN/GaN HEMT
CH Oxley et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2006)
Characterization of bulk GaN rectifiers for hydrogen gas sensing
L Voss et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2005)
Influence of layer doping and thickness on predicted performance of NPNAlGaN/GaN HBTs
KP Lee et al.
SOLID-STATE ELECTRONICS (2003)
Microwave noise performance of AlGaN-GaNHEMTs with small DC power dissipation
JS Moon et al.
IEEE ELECTRON DEVICE LETTERS (2002)
AlGaN/GaN HEMTs - An overview of device operation and applications
UK Mishra et al.
PROCEEDINGS OF THE IEEE (2002)
First AlGaN/GaN MOSFET with photoanodic gate dielectric
D Mistele et al.
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY (2002)
Vertical and lateral GaN rectifiers on free-standing GaN substrates
AP Zhang et al.
APPLIED PHYSICS LETTERS (2001)
Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes
JWP Hsu et al.
APPLIED PHYSICS LETTERS (2001)
Temperature dependent transport properties in GaN, A1xGa1-xN, and InxGa1-xN semiconductors
AFM Anwar et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2001)
Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors
EJ Miller et al.
JOURNAL OF APPLIED PHYSICS (2000)
Temperature dependence and current transport mechanisms in AlxGa1-xN Schottky rectifiers
AP Zhang et al.
APPLIED PHYSICS LETTERS (2000)
分享论文
