期刊
APPLIED PHYSICS LETTERS
卷 96, 期 12, 页码 -出版社
AIP Publishing
DOI: 10.1063/1.3367748
关键词
electron spin polarisation; elemental semiconductors; magnetic tunnelling; magnetoelectronics; magnetoresistance; phosphorus; silicon; spin dynamics
The Hanle-type spin precession method was carried out in association with nonlocal (NL) magnetoresistance measurement using a highly doped (5x10(19) cm(-3)) silicon (Si) channel. The spin diffusion length obtained by the Hanle-method is in good agreement with that of the gap dependence of NL signals. We have evaluated the interface and bulk channel effects separately, and it was demonstrated that the major factor of temperature dependence of NL signals originates from the spin polarization reduction at interface between the tunnel barrier and silicon.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据