期刊
APPLIED PHYSICS LETTERS
卷 97, 期 5, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3477953
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资金
- Korea Government MEST [R0A-2008-000-20052-0]
- National Research Foundation of Korea [R0A-2008-000-20052-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We have observed a switching transition between bistable memory switching and monostable threshold switching in Pt/NiO/Pt structure. Bistable memory switching could be changed to monostable threshold switching by applying a positive electrical pulse with height of 2 V and width between 10(-2) and 10(-4) s. The change is reversible by applying a negative electrical pulse with the same height and width. By considering polarity-and width-dependence of the switching transition and compositional difference on electrical properties in NiOx, we have proposed a model in which the migration of oxygen ions (O2-) is responsible for the switching transition in Pt/NiO/Pt structures. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3477953]
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