Resistive switching transition induced by a voltage pulse in a Pt/NiO/Pt structure

We have observed a switching transition between bistable memory switching and monostable threshold switching in Pt/NiO/Pt structure. Bistable memory switching could be changed to monostable threshold switching by applying a positive electrical pulse with height of 2 V and width between 10(-2) and 10(-4) s. The change is reversible by applying a negative electrical pulse with the same height and width. By considering polarity-and width-dependence of the switching transition and compositional difference on electrical properties in NiOx, we have proposed a model in which the migration of oxygen ions (O2-) is responsible for the switching transition in Pt/NiO/Pt structures. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3477953]