4.6 Article

Enhancement of thermoelectric figure of merit in bismuth nanotubes

期刊

APPLIED PHYSICS LETTERS
卷 97, 期 2, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.3463473

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IV-VI semiconductors; lead compounds; lithium compounds; nickel; ohmic contacts; power conversion; semiconductor quantum dots; semiconductor-metal boundaries; solar cells

资金

  1. National Natural Science Foundation of China [10704074]
  2. National Major Project of Fundamental Research for Nanomaterials and Nanostructures [2005CB623603]

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Thermoelectric transport properties of bismuth nanotubes are theoretically predicted and mechanisms of the enhancement of the thermoelectric figure of merit (ZT) are discussed. A significant enhancement in ZT was found and is mainly attributed to the enhanced Seebeck coefficient resulting from the modified density of state and decreased phonon thermal conductivity induced by the boundary phonon scattering in nanotubes. The optimum power factor can be realized at the Fermi energy level locating near the subband edge, and the optimal ZT increases with decreasing the thickness and diameter of nanotubes. (C) 2010 American Institute of Physics. [doi:10.1063/1.3463473]

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