相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Morphology characterization of argon-mediated epitaxial graphene on C-face SiC
J. L. Tedesco et al.
APPLIED PHYSICS LETTERS (2010)
Epitaxial graphene on cubic SiC(111)/Si(111) substrate
A. Ouerghi et al.
APPLIED PHYSICS LETTERS (2010)
Graphene Synthesis on Cubic SiC/Si Wafers. Perspectives for Mass Production of Graphene-Based Electronic Devices
Victor Yu. Aristov et al.
NANO LETTERS (2010)
Graphene growth by molecular beam epitaxy using a solid carbon source
E. Moreau et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2010)
Morphology of graphene on SiC(000(1)over-bar) surfaces
Luxmi et al.
APPLIED PHYSICS LETTERS (2009)
Hall effect mobility of epitaxial graphene grown on silicon carbide
J. L. Tedesco et al.
APPLIED PHYSICS LETTERS (2009)
Low temperature growth of epitaxial graphene on SiC induced by carbon evaporation
A. Al-Temimy et al.
APPLIED PHYSICS LETTERS (2009)
Etch rates near hot-wall CVD growth temperature for Si-face 4H-SiC using H-2 and C3H8
B. L. VanMil et al.
JOURNAL OF CRYSTAL GROWTH (2009)
Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide
Konstantin V. Emtsev et al.
NATURE MATERIALS (2009)
Surface morphology and characterization of thin graphene films on SiC vicinal substrate
J. Penuelas et al.
PHYSICAL REVIEW B (2009)
Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation
C. Riedl et al.
PHYSICAL REVIEW LETTERS (2009)
Interaction, growth, and ordering of epitaxial graphene on SiC{0001} surfaces: A comparative photoelectron spectroscopy study
K. V. Emtsev et al.
PHYSICAL REVIEW B (2008)
Why multilayer graphene on 4H-SiC(000(1)over-bar) behaves like a single sheet of graphene
J. Hass et al.
PHYSICAL REVIEW LETTERS (2008)
Structural and electronic properties of graphite layers grown on SiC(0001)
Th. Seyller et al.
SURFACE SCIENCE (2006)
Electronic confinement and coherence in patterned epitaxial graphene
Claire Berger et al.
SCIENCE (2006)
Step control of vicinal 6H-SiC(0001) surface by H2 etching -: art. no. 104919
A Nakajima et al.
JOURNAL OF APPLIED PHYSICS (2005)
Electric field effect in atomically thin carbon films
KS Novoselov et al.
SCIENCE (2004)
Gaseous etching of 6H-SiC at relatively low temperatures
ZY Xie et al.
JOURNAL OF CRYSTAL GROWTH (2000)