4.6 Article

Improvement of electron injection in inverted bottom-emission blue phosphorescent organic light emitting diodes using zinc oxide nanoparticles

期刊

APPLIED PHYSICS LETTERS
卷 96, 期 15, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.3400224

关键词

doping; II-VI semiconductors; nanoparticles; organic compounds; organic light emitting diodes; phosphorescence; transparency; wide band gap semiconductors; work function; zinc compounds

资金

  1. Ministry of Knowledge Economy (MKE) of Korea [A1100-0901-1750]
  2. Brain Korea 21 Project

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We fabricated highly efficient iridium(III) bis[(4,6-di-fluorophenyl)-pyridinato-N,C2(')] picolinate doped inverted bottom-emission blue phosphorescent organic light-emitting diodes, with an electron injection layer of zinc oxide (ZnO) nanoparticles (NPs). The ZnO NPs layer lowers the turn-on voltage by about 4 V and significantly enhances the efficiency. The device with ZnO NPs shows peak efficiencies of 16.5 cd/A and 8.2%, about three times higher than those of the device without ZnO NPs. Since the ZnO NPs layer has a wide band gap, good electron transporting properties and low work function, it can be utilized as an effective electron injection layer with good transparency.

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