4.6 Article

High-mobility bio-organic field effect transistors with photoreactive DNAs as gate insulators

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APPLIED PHYSICS LETTERS
卷 96, 期 10, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.3299022

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  1. Ministry of Knowledge Economy of Korean government [F0004011-2009-32]
  2. NBIT [K2070200068808A040001710]
  3. KICOS
  4. MOST
  5. AFOSR

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Organic-soluble DNAs bearing chalcone moieties were synthesized by using purified natural sodium DNA. In addition to the chalcone-containing DNA homopolymer (CcDNA), a copolymer (CTMADNA-co-CcDNA) was synthesized. They were employed as gate insulators for fabricating organic thin-film transistors. An organic semiconductor (5,5'-(9,10-bis((4-hexylphenyl)ethynyl) anthracene-2,6-yl-diyl)bis(ethyne-2,1-diyl)bis(2-hexylthiophene; HB-ant-THT) was deposited on the photocrosslinked DNA-based gate insulators via a solution process. Interestingly, the resulting TFT devices had extremely high field-effect mobilities, and their corresponding transfer curves indicated low hysteresis. The carrier mobility of the device with HB-ant-THT deposited on the CTMADNA-co-CcDNA gate insulator was the best, i.e., 0.31 cm(2) V-1 s(-1) (I-on/I-off=1.0 x 10(4)). (C) 2010 American Institute of Physics. [doi: 10.1063/1.3299022]

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