期刊
APPLIED PHYSICS LETTERS
卷 97, 期 25, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3532105
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资金
- MEST [2010-0000506]
- National Research Foundation of Korea [2009-0081202] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
An abrupt change of conductance at a threshold magnetic field was observed in a device consisting of a nonmagnetic narrow-gap semiconductor. The conductance varies more than 25 times as the magnetic field increases. The threshold magnetic field can be tuned using a bias voltage from zero to several hundred Gauss. This large magnetoconductance effect is caused by the magnetic field-dependent impact ionization process. A theoretical model is proposed, and calculations based on this model simulate the experimental results closely. This device may be a good candidate for an electrical switching device controlled by a magnetic field. (C) 2010 American Institute of Physics. [doi:10.1063/1.3532105]
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