Electric field induced anisotropy modification in (Ga,Mn)As: A strategy for the precessional switching of the magnetization

We propose a scheme for the precessional switching of the magnetization in the magnetic semiconductor (Ga,Mn)As using cubic anisotropy field reduction triggered by electric field and a small assisting magnetic field. We identify magnetic field regions for toggle switching and direct-overwrite of the magnetization and discuss the toggle switching critical curve dependence on the cubic anisotropy field decrease. We also determine the half-precession period of the magnetization and propose field conditions for magnetization trajectories which are optimally immune to external noise and damping.