期刊
APPLIED PHYSICS LETTERS
卷 96, 期 14, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3379016
关键词
gallium arsenide; gallium compounds; III-V semiconductors; magnetic anisotropy; magnetic semiconductors; magnetic switching; manganese compounds
资金
- Triangle de la Physique [2007-051T]
- EU NAMASTE [214499]
We propose a scheme for the precessional switching of the magnetization in the magnetic semiconductor (Ga,Mn)As using cubic anisotropy field reduction triggered by electric field and a small assisting magnetic field. We identify magnetic field regions for toggle switching and direct-overwrite of the magnetization and discuss the toggle switching critical curve dependence on the cubic anisotropy field decrease. We also determine the half-precession period of the magnetization and propose field conditions for magnetization trajectories which are optimally immune to external noise and damping.
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