期刊
APPLIED PHYSICS LETTERS
卷 97, 期 23, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3524820
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资金
- Office of Naval Research [N000140910086]
- National Science Foundation [ECCS-0754367]
- Department of Science and Technology [SR/S3/EECE/0060/2009]
We demonstrate high temperature electrical spin injection and detection in degenerately p-doped GaAs in vertical spin valves using valence band electron tunneling. The maximum measured magnetoresistance at 10 and 300 K is 40% and similar to 1%, respectively. Spin relaxation in these devices was found to be relatively insensitive to temperature (T) for T> 125 K. The spin injection and detection efficiencies are mostly dominated by the ferromagnetic contact polarization and spin independent transport at the ferromagnet/semiconductor interface. (C) 2010 American Institute of Physics. [doi:10.1063/1.3524820]
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