期刊
SYNTHETIC METALS
卷 146, 期 3, 页码 265-268出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.synthmet.2004.08.023
关键词
dithiophene-tetrathiafulvalene (DT-TTF); field-effect transistors; single DT-TTF crystals
Organic single-crystal field-effect transistors based on dithiophene-tetrathiafulvalene (DT-TTF) showing a charge-carrier mobility of 1.4 cm(2)/Vs were recently reported. These crystals were prepared from solution, making this material interesting for potential applications in low-cost electronics. Here, we studied the temperature dependence of a DT-TTF field-effect transistor as well as the transport properties of single DT-TTF crystals. We found that the field-effect mobility follows a thermally activated hopping model with activation energy values (E-a) of around 85 meV, which is in agreement with the standard four-contact conductivity measurements performed on the single-crystals. In addition, the dependence of the E-a with temperature and of the threshold voltage with gate-induced charge suggest that the crystals do not contain deep impurity traps. (C) 2004 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据