期刊
ADVANCED MATERIALS
卷 16, 期 21, 页码 1890-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200400472
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Single crystal n-type silicon nanowires (SiNWs) with controlled phosphorus dopant concentrations have been successfully synthesized for the first time (see Figure). Field-effect transistor (FET) devices fabricated from these n-SiNWs exhibit good device properties, with mobilities more than 100 times greater than previous reports, and comparable to high-performance planar silicon FETs.
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