Reverse Schottky-asymmetry spin current detectors

By reversing the Schottky barrier-height asymmetry in hot-electron semiconductor-metal-semiconductor ballistic spin filtering spin detectors, we have achieved the following: (1) demonstration of >50% spin polarization in silicon, resulting from the increase of detection efficiency by elimination of the ferromagnet/silicon interface on the transport channel detector contact and (2) evidence of spin transport at temperatures as high as 260 K, enabled by an increase in detector Schottky barrier height. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3504659]