期刊
APPLIED PHYSICS LETTERS
卷 97, 期 13, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3495939
关键词
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资金
- National Basic Research Program of China [2007CB936201]
- Major Project of International Cooperation and Exchanges [50620120439, 2006DFB51000]
- State Key laboratory for Advanced Metals and Materials [2008ZD-09, 2008Z-08]
- Fundamental Research Funds for the Central Universities
The localized ultraviolet photoresponse in single bent ZnO micro/nanowires bridging two Ohmic contacts has been investigated. The ZnO micro/nanowire has a higher photoresponse sensitivity of about 190% at the bent region (bending strain: about 4%) than that at the straight region (about 50%). The rise and decay time constants are almost the same in the straight and bent regions of the ZnO micro/nanowire. A possible mechanism has been proposed and discussed. The bent ZnO micro/nanowires could be potentially useful for fabricating the coupled piezoelectric and optoelectronic nanodevices. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3495939]
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