期刊
SCIENCE
卷 306, 期 5698, 页码 1005-1009出版社
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.1103218
关键词
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Biaxial compressive strain has been used to markedly enhance the ferroelectric properties of BaTiO3 thin films. This strain, imposed by coherent epitaxy, can result in a ferroelectric transition temperature nearly 500degreesC higher and a remanent polarization at least 250% higher than bulk BaTiO3 single crystals. This work demonstrates a route to a lead-free ferroelectric for nonvolatile memories and electro-optic devices.
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