Electric field modulation of thermopower for transparent amorphous oxide thin film transistors

To clarify the electronic density of states (DOS) around the conduction band bottom for state of the art transparent amorphous oxide semiconductors (TAOSs), InGaZnO4 and In2MgO4, we fabricated TAOS-based transparent thin film transistors (TTFTs) and measured their gate voltage dependence of thermopower (S). TAOS-based TTFTs exhibit an unusual S behavior. The vertical bar S vertical bar-value abruptly increases but then gradually decreases as V-g increases, clearly suggesting the antiparabolic shaped DOS is hybridized with the original parabolic shaped DOS around the conduction band bottom. (c) 2010 American Institute of Physics. [doi:10.1063/1.3512870]