期刊
APPLIED PHYSICS LETTERS
卷 97, 期 12, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3491211
关键词
1; f noise; fluctuations; MOSFET; stress effects
资金
- National Science Council (NSC) of Taiwan [99-2221-E-230-019]
The use of low-frequency (1/f) noise to evaluate stress-memorization technique (SMT) induced-stress in n-channel metal-oxide-semiconductor field-effect transistors is investigated. Through observing Hooge's parameter alpha(H), we found that the unified model can properly interpret the 1/f noise mechanism in our device. On the other hand, lower normalized input-referred noise (LSVG) level in number-fluctuation-dominated regime (region I) and smaller curvature of LSVG versus V-GS-V-TH in mobility-fluctuation-dominated regime (region II) are attributed to the reduced tunneling attenuation length and Coulomb scattering coefficient, respectively. It represents an intrinsic benefit of 1/f noise behavior stemming from SMT-induced more strain in short channel device. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3491211]
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