期刊
APPLIED PHYSICS LETTERS
卷 97, 期 1, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3462321
关键词
crystallisation; deep levels; flash memories; MIS structures; permittivity; rapid thermal annealing; semiconductor storage; terbium compounds
资金
- National Science Council (NSC) of Taiwan [NSC-98-2221-E-182-056-MY3]
- National Nano Device Laboratories [NDL97-C05SG-135]
In this paper, we proposed a metal-oxide-high-k-oxide-silicon (MOHOS)-type memory structure fabricating a high-k Tb2O3 charge trapping layer for flash memory applications. The high-k Tb2O3 MOHOS-type memories annealed at 800 degrees C exhibited large threshold voltage shifting (memory window of similar to 1.41 V operated at V-g=8 V at 0.1 s), excellent data retention (charge loss of similar to 10% measured time up to 10(4) s and at 85 degrees C), and good endurance characteristics (program/erase cycles up to 10(5)) because of the high probability and deep trap level for trapping the charge carrier due to the formation of the crystallized Tb2O3 with a high dielectric constant of 11.8. (C) 2010 American Institute of Physics. [doi:10.1063/1.3462321]
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