期刊
APPLIED PHYSICS LETTERS
卷 97, 期 3, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3467048
关键词
creep; dislocation arrays; gallium arsenide; magnetic domain walls; manganese compounds; semiconductor epitaxial layers; solid phase epitaxial growth; surface roughness
资金
- JSPS [20360001]
- Tohoku University
- JST
- Grants-in-Aid for Scientific Research [20360001] Funding Source: KAKEN
We have compared the scaling exponents in scaling formula for magnetic domain wall creep by measuring the magnetic-field induced domain wall velocity of (Ga,Mn)As layers grown on (In,Al)As semistep-graded buffer layer and (In,Ga)As buffer layer. The different critical exponents for the two (Ga,Mn)As layers indicate that the observed creep motions belong to different universality classes, which are found to be governed by the degree of surface roughness due to crosshatch dislocation introduced during epitaxial growth. Domain wall creep motion in (Ga,Mn)As layer grown on (In,Al)As with flatter surface belongs to random-field disorder, whereas that in (In,Ga)As to random-bond disorder. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3467048]
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