4.6 Article

Color tunable light-emitting diodes based on p+-Si/p-CuAlO2/n-ZnO nanorod array heterojunctions

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APPLIED PHYSICS LETTERS
卷 97, 期 1, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.3459963

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annealing; copper compounds; electroluminescence; elemental semiconductors; II-VI semiconductors; light emitting diodes; nanorods; semiconductor devices; silicon; spectral line shift; sputter deposition; vapour phase epitaxial growth; wide band gap semiconductors; zinc compounds

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Wide-range color tuning from red to blue was achieved in phosphor-free p(+)-Si/p-CuAlO2/n-ZnO nanorod light-emitting diodes at room temperature. CuAlO2 films were deposited on p(+)-Si substrates by sputtering followed by annealing. ZnO nanorods were further grown on the annealed p(+)-Si/p-CuAlO2 substrates by vapor phase transport. The color of the p-CuAlO2/n-ZnO nanorod array heterojunction electroluminescence depended on the annealing temperature of the CuAlO2 film. With the increase of the annealing temperature from 900 to 1050 degrees C, the emission showed a blueshift under the same forward bias. The origin of the blueshift is related to the amount of Cu concentration diffused into ZnO. (C) 2010 American Institute of Physics. [doi:10.1063/1.3459963]

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