期刊
APPLIED PHYSICS LETTERS
卷 97, 期 2, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3464173
关键词
capacitance; chemical interdiffusion; elemental semiconductors; germanium; hafnium compounds; high-k dielectric thin films; interface states; lanthanum compounds; leakage currents; MOS capacitors
资金
- Office of Naval Research [N00013-10-1-0668]
With a combination of scanning tunneling microscopy, Auger electron spectroscopy and carbon monoxide titration the stability of graphene-Ni interfaces is investigated. Graphene supported on Ni(111) is stable to annealing temperature of 650 degrees C. However, if additional Ni is deposited on the surface it becomes unstable at already 100 degrees C and a surface-carbide is formed that allows the Ni deposit to penetrate the surface layer. Upon diffusion of all Ni deposits into the substrate, the graphene layer is reformed. The destruction of graphene by the formation of a carbide phase enables patterning of the graphene by controlled nickel deposition. (C) 2010 American Institute of Physics. [doi:10.1063/1.3464173]
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