期刊
APPLIED PHYSICS LETTERS
卷 96, 期 25, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3456395
关键词
ab initio calculations; electron traps; elemental semiconductors; Ge-Si alloys; hole traps; hydrogen; impurities; internal stresses; semiconductor doping; silicon
资金
- AFOSR [FA9550-05-1-0306]
- McMinn Endowment at Vanderbilt University
The appearance of carrier traps and the deactivation of dopants are typical hydrogen-related phenomena that are of prime importance to the reliability of traditional Si-based devices. Here we probe with first-principles calculations, the dynamics of hydrogen as individual impurities or in complexes with dopants in strained Si (s-Si) and SiGe systems. We find that the charged state determines the tendency of hydrogen to be released from dopant sites and to shuttle between a SiGe substrate and a s-Si overlayer. In this way, the effect of hydrogen differs between accumulation and inversion cycles of s-Si and SiGe devices. (C) 2010 American Institute of Physics. [doi:10.1063/1.3456395]
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