期刊
APPLIED PHYSICS LETTERS
卷 96, 期 25, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3457479
关键词
phase transformations; Raman spectra; semiconductor doping
The influence of dopants and counterdopants on high-pressure phase transitions of silicon was investigated by high-pressure Raman microscopy. A small amount of dopants were found to dramatically influence the high pressure stability of silicon. The combination of doping and counterdoping provides an effective way to manipulate the critical pressures of the phase transitions, which offers unique insights on atomic mechanisms of high pressure phase transitions of Si. (C) 2010 American Institute of Physics. [doi:10.1063/1.3457479]
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据