期刊
APPLIED PHYSICS LETTERS
卷 97, 期 1, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3462067
关键词
diodes; electrical conductivity; ferroelectric devices; ferroelectric materials; lithium compounds; memristors; tunnelling; vacancies (crystal)
资金
- National Natural Science Foundation of China [10804048]
- State Key Program for Basic Research of China [2010CB630704]
- National Key Project [2009ZX02023-5-4]
- Research Fund for the Doctoral Program of Higher Education of China [200802841003]
Memristive systems are expected to lead to analog computers that process information the way the human brain does. In this work, memristive behaviors have been revealed in ferroelectric diodes employing LiNbO3. The conduction states in such diodes can be continually modulated by the successive voltage sweeps, which is essentially based on electron tunneling through a thin residual barrier. The role of oxygen vacancies in such memristive behaviors is also discussed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3462067]
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