Shunting path formation in thin film structures

We present a model for shunt formation in thin films containing small volume fractions of conductive components, below the critical volume fraction of percolation theory. We show that in this regime shunting is due to almost rectilinear conductive paths, which is beyond the percolation theory framework. The criteria of rectilinear paths shunting versus the percolation cluster scenario are established. The time and temperature dependence of shunting statistics is predicted with possible applications in phase change memory and thin oxides. (C) 2010 American Institute of Physics. [doi:10.1063/1.3378813]