期刊
APPLIED PHYSICS LETTERS
卷 96, 期 13, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3377872
关键词
aluminium; charge injection; chromium; electrical contacts; electrodes; gallium; gallium compounds; III-V semiconductors; II-VI semiconductors; indium compounds; light emitting diodes; silver; wide band gap semiconductors; zinc compounds
资金
- Bureau of Energy, Ministry of Economic Affairs [98D0204-6]
- National Science Council [NSC 97-2221-E-006-242-MY3, 982221-E-218-005-MY3]
We demonstrate a GaN-based light-emitting diode (LED) with nonalloyed metal contacts and textured Ga-doped ZnO (GZO) contact layer to serve as the n- and p-type electrode pads, respectively. Compared with the conventional LEDs with flat surface and Cr/Au metal contacts, the nonalloyed Ag/Cr/Au contacts used in the present experimental LEDs play the role of reflector to prevent the emitted light from absorption by the opaque electrode pads. Enhancement of light output power observed from the experimental LEDs is also due to the textured GZO layer that can disperse the angular distribution of photons at the GZO/air interface. With an injection current of 20 mA, the output power of experimental LEDs can be improved markedly by a magnitude of 30% compared with conventional GaN-based LEDs.
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