期刊
APPLIED PHYSICS LETTERS
卷 96, 期 14, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3383235
关键词
Coulomb blockade; electrodes; electromigration; elemental semiconductors; masks; nanofabrication; self-assembly; semiconductor quantum dots; silicon; silicon-on-insulator; single electron transistors; sputter etching
We present an approach to fabricate single-electron devices consisting of a silicon quantum dot (QD) between metallic leads. Silicon QDs are obtained by reactive ion etching into a silicon-on-insulator substrate partially protected by a self-assembled etch mask. Electrodes are fabricated and aligned to the QDs by an electromigration process whereby their native oxide serves as tunneling barrier. The devices show Coulomb blockade corresponding to a charging energy of 19.4 meV and can be switched from the nonconducting to a conducting state giving rise to Coulomb diamonds. The behavior is well reproduced by a numerical orthodox theory calculation.
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