期刊
APPLIED PHYSICS LETTERS
卷 96, 期 12, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3313949
关键词
chemical interdiffusion; epitaxial layers; Ge-Si alloys; secondary ion mass spectroscopy; semiconductor heterojunctions
Si-Ge interdiffusion under oxidizing and inert conditions has been studied in epitaxial relaxed Si1-xGex/compressive Si1-yGey/relaxed Si1-xGex heterostructures. The interdiffusion was measured by secondary ion mass spectroscopy (SIMS) and studied using simulations. Within the SIMS accuracy, the measured Ge profiles show that oxidation has a small effect, if any, on the Si-Ge interdiffusion of these structures. These results suggest that oxidation does not accelerate Si-Ge interdiffusion significantly, which lessens process integration constraints for SiGe devices such as high mobility dual channel metal oxide semiconductor field effect transistors and heterostructure tunneling field effect transistors.
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