期刊
APPLIED PHYSICS LETTERS
卷 96, 期 13, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3374882
关键词
contact resistance; crystal structure; deep levels; gallium compounds; Hall mobility; hole mobility; III-V semiconductors; indium compounds; light emitting diodes; magnesium; molecular beam epitaxial growth; photoluminescence; plasma deposition; semiconductor doping; semiconductor growth; semiconductor quantum dots; transmission electron microscopy; wide band gap semiconductors
资金
- Department of Energy [DEFC2607NT43229]
Acceptor doping of GaN with Mg during plasma-assisted molecular beam epitaxy, under N-rich conditions and a relatively high growth temperature of 740 degrees C, was investigated. The p-doping level steadily increases with increasing Mg flux. The highest doping level achieved, determined from Hall measurements, is 2.1x10(18) cm(-3). The corresponding doping efficiency and hole mobility are similar to 4.9% and 3.7 cm(2)/V s at room temperature. Cross-sectional transmission electron microscopy and photoluminescence measurements confirm good crystalline and optical quality of the Mg-doped layers. An InGaN/GaN quantum dot light emitting diode (lambda(peak)=529 nm) with p-GaN contact layers grown under N-rich condition exhibits a low series resistance of 9.8 .
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