Electrical conduction properties of n-type Si-doped AlN with high electron mobility (>100 cm2 V-1 s-1)

For n-type Si-doped AlN, we have obtained an electron mobility and concentration of 125 cm(2) V-1 s(-1) and 1.75x10(15) cm(-3) at 300 K, respectively. At 250 K, the mobility reached the maximum of 141 cm(2) V(-1)s(-1). To explain the temperature dependence of the mobility, we calculated mobilities limited by specific scattering mechanisms. We found that the mobility is limited by neutral impurity scattering rather than ionized impurity scattering or lattice scattering because of a large donor ionization energy (similar to250 meV). (C) 2004 American Institute of Physics.