Sol-gel deposition and piezoelectric properties of {110}-oriented Pb(Zr0.52Ti0.48)O3 thin films

Pb(ZrxTi1-x)O-3 [PZT] thin films of thickness 2.0 mu m were fabricated on silicon substrates (111)Pt/Ti/SiO2/Si using a sol-gel spin-coating technique. PZT films on substrates with a strontium titanate bottom layer are preferentially {110}-oriented with a columnar structure. The PZT films exhibit good dielectric properties with a dielectric permittivity, epsilon(r)=1545 and dielectric loss, tan delta=0.04. Excellent piezoelectric characteristics are also exhibited by the {110}-oriented films with an average effective transverse piezocoefficient, e(31)(*) of -8.4 C/m(2). The influence of film texture and composition on the transverse piezocoefficient have also been studied.