期刊
APPLIED PHYSICS LETTERS
卷 96, 期 8, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3334730
关键词
doping profiles; electron mobility; graphene; Landau levels; soldering; surface morphology
资金
- DFG [Mo-858/8-1, Mo 858/11-1]
Using the recently developed technique of microsoldering, we perform systematic transport studies of the influence of polymethylmethacrylate on graphene revealing a doping effect with a n-type dopant density Delta n of up to Delta n=3.8x10(12) cm(-2) but negligible influence on mobility and hysteresis. Moreover, we show that microsoldered graphene is free of contamination and exhibits very similar intrinsic rippling as found for lithographically contacted flakes. Characterizing the microsoldered sample by scanning tunneling spectroscopy, we demonstrate a current induced closing of the phonon gap and a B-field induced double peak attributed to the 0 Landau level.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据