期刊
APPLIED PHYSICS LETTERS
卷 96, 期 5, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3309670
关键词
electrodes; gallium compounds; III-V semiconductors; nanowires; negative resistance; semiconductor quantum wires; silicon; silicon compounds; wide band gap semiconductors
资金
- Romanian Ministry of Education and Research
- European Laboratory-LEA Smart MEMS
Negative differential resistance of gallium nitride nanowire networks deposited on an interdigitated electrode configuration patterned on a silicon dioxide/high resistivity Si substrate is experimentally demonstrated at room temperature. This effect is attributed to tunnelling between crossed gallium nitride nanowires.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据
分享论文
